国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6） C04B041/50（4） C04B041/85（3）
发明人 GUO H（3） LEI T（3） ZHANG Y（3）
ZHANG C（2）
公开年 2013（6）
申请年 2013（6）
专利权人 UNIV XIDIAN（3）

Preparing graphene/nickel-zinc-cerium-iron oxide nano-absorbing material comprises e.g. dissolving nickel-zinc-cerium-iron oxide powder in N,N-dimethylformamide, dropping graphite oxide-N,N-dimethylformamide, reacting and vacuum drying.

HUANG Y, WANG K, ZHANG W, WANG Y, WU H, SANG Y

Preparation of graphene oxide modified polycarboxylate water reducer includes adding sulfuric acid, potassium peroxydisulfate and phosphorus pentoxide into reactor, heating, adding natural graphite raw material, stirring, and filtering.

LV S, MA Y, ZHOU Q

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of silica-based surface carboxylated graphene oxide self-assembled composite film, involves processing silicon wafer, cleaning, obtaining silicon wafer with silica-based surface, adding graphene oxide solution, and cleaning.

HUA C, CHENG X, LI P, CHENG H, SHU D, WANG C