国家/地区 法国（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（5） B82Y040/00（3） C30B029/02（3）
B82Y030/00（2） C01B031/04（2） C30B029/36（2）
发明人 OUERGHI A（2）
公开年 2013（6）
申请年 2011（6）
专利权人 CENT NAT REC.（3） CNRS CENT NA.（2）

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Manufacture of graphene for transparent electrode of transistor, involves supplying liquid metal in carbon source, contacting graphene seed on surface of liquid metal and growing graphene seed on surface of liquid metal.

WOO Y S, CHOI J Y, ZHIN Z, GUO H, CHOI W M