国家/地区 美国（10）
IPC部 C（10） H（7） B（3）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（10） C23C016/26（9） C01B031/02（5）
C01B032/186（4） C23C016/02（3） C23C016/44（3）
H01B013/00（3） C23C016/06（2） H01B001/04（2）
H01L021/20（2） H01L029/16（2） H01L029/66（2）
发明人 CHOI M（2） JUNG M（2） MOON J（2）
公开年 2014（10）
申请年 2014（10）
专利权人 LG ELECTRONI.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Producing graphene by plasma-enhanced chemical vapor deposition, comprises applying potential and exciting plasma-forming gas between metal substrate and carbonaceous electrode, ablating reactive carbon species, and growing graphene.

SINTON S W, BEDWORTH P V

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y