国家/地区 美国（19） 韩国（18） 中国（14） 世界知识产权组织（14） 日本（12） 欧洲专利局（EPO）（8） 台湾（5） 西班牙（2） 新加坡（2）
IPC部 B（28）
IPC大类 B01（28）
IPC小类 B01J（28）
IPC C01B032/186（28）
发明人 CHOI J（2） CHOI J Y（2） IFUKU R（2）
LI Y（2） MATSUMOTO T（2） SHIN H（2）
SHIN H J（2） WANG H（2） YOON J（2）
ZHANG X（2）
公开年 2018（4） 2014（3） 2021（3） 2022（3） 2011（2） 2016（2） 2020（2） 2023（2）
申请年 2020（4）  2014（3）  2017（3）  2021（3）  2022（3）  2010（2）  2013（2）  2016（2） 
专利权人 SAMSUNG ELEC.（2） TOKYO ELECTR.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Preparation of nitrogen-functionalized porous graphene for electrochemical devices, involves synthesizing porous graphene by chemical vapor deposition using ethylene, and preparing nitrogen-doped porous graphene by hydrothermal method.

IONEBRASU D, ANDREI R D, JIANU C, ENACHE S, ENACHE A, CARCADEA E, VARLAM M, JIANU C C

Preparation of micro super capacitor used for manufacturing large integrated circuit, involves pretreating catalytic metal, preparing graphene, designing photomasking mask plate, preparing graphene microelectrode, and adding gel electrolyte.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y

Preparing molybdenum disulfide/graphene two-dimensional material hetero junction visible light catalyst, comprises e.g. preparing single layer uniform graphene on surface of copper foil, and growing molybdenum disulfide on graphene surface.

CHENG L, ZHENG H, XU W, WANG S

Production of graphene on metallic substrate for layered composite, involves depositing layer of carbon barrier material on metallic substrate, depositing layer of chemical vapor deposition catalyst and forming graphene on catalyst layer.

SINGH R, PATWARY S, BANERJEE P C