国家/地区 中国（20）
IPC部 C（20）
IPC大类 C01（20）
IPC小类 C01B（20） C23C（20） H01L（5）
H01J（2）
IPC C01B032/186（20）
发明人 LIU Z（4） WANG X（4） CAO F（2）
NARKEVICIUTE I（2） PENG H（2） VARADARAJAN B N（2）
WANG K（2） YANG H（2）
公开年 2021（20）
申请年 2021（12）  2020（5）  2019（3） 
专利权人 BEIJING GRAP.（4） UNIV PEKING（3） LAM RES CORP（2） NINGBO INST .（2）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Graphene composite film comprises graphene composite film main body comprising carbon nano-tube film substrate, and copper substrate.

MAO J

Industrial mass production of vertical graphene composite carbon felt involves soaking carbon felt in acid solution, vibrating, repeatedly washing soaked carbon felt with deionized water, drying, and putting carbon felt on roller device.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Three-dimensional integrated photo-thermal conversion material is prepared by preparing foamed nickel graphene material by chemical vapor deposition on pretreated foamed nickel substrate, and preparing nickel-graphene- molybdenum oxide by hydrothermal method.

CUI H, WEI N, ZHAO M, GONG L, XU R, LI Q

Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises e.g. passing rolled substrate through reaction chamber, turning on plasma, winding of rotating shaft to form vertical graphene and reacting.

WANG Z, LI Y, LIU M, LIU J

Base metal flake heating device for preparing graphene by chemical vapor deposition method comprises e.g. bottom plate, top plate, and support column provided between bottom side of the top plate and the bottom plate.

LIN Y