国家/地区 韩国（7） 美国（5） 世界知识产权组织（3） 中国（2） 日本（2）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10）
IPC C23C016/26（10）
发明人
公开年 2011（5） 2010（3） 2009（2）
申请年 2009（10）
专利权人

Manufacture of graphene layer used for electronic circuit, involves mounting molecular beam epitaxy chamber on substrate and forming graphene layers by supplying carbon source on substrate.

SEO D

Manufacture of graphene for, e.g. solar cells, involves providing metallic foil, forming carbon thin film as metal thin film, irradiating laser to carbon film, and cooling mixed layer of carbon and metal formed by laser irradiation.

HUN L B, HWANG H, CHO C

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Synthesis of carbon nanotube for e.g. battery, involves contacting catalyst distributed on substrate with hydrocarbon gas and gas including oxygen, controlling formation of graphene layer, and varying catalyst deactivation using oxygen.

VASENKOV A V

Manufacturing graphene nanoribbons used in hydrogen reservoir and electrical device, involves preparing substrate, preparing nanowire, and separating obtained graphene nanoribbons.

KIM S J, PARK J E, JIN K S, EUN P J

Manufacture of graphene involves producing thermal plasma flame, producing carbon atom beam by adding air or liquid carbon source material into flame, producing beam with decreasing energy of carbon atom beam and crashing carbon atom beam.

SEO J, KIM J, JUNG S S, JU H K

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M