国家/地区 中国（52） 美国（25） 韩国（15） 世界知识产权组织（12） 日本（6） 台湾（6） 欧洲专利局（EPO）（4） 英国（2） 印度（2） 新加坡（2）
IPC部 C（77）
IPC大类 C23（77）
IPC小类 C23C（77） C01B（32） H01L（13）
B82Y（11） C30B（8） H01J（5）
H01M（5） C23F（3） H01B（3）
B01J（2） B22F（2） C01G（2）
C08J（2） C21D（2） C22F（2）
IPC C23C016/52（77）
发明人 NAGEL C J（5） BRODEUR C L（4） HE P（3）
LIU Y（3） WU T（3） ZHANG L（3）
CUI H（2） FAN T（2） GUO C（2）
LI C（2） LI P（2） LIU L（2）
LIU S（2） LIU X（2） LIU Z（2）
公开年 2021（17） 2022（10） 2020（8） 2014（7） 2017（7） 2018（6） 2023（6） 2016（5） 2013（4） 2012（3） 2019（2）
申请年 2016（13）  2020（13）  2021（12）  2022（10）  2019（7）  2013（5）  2012（4）  2014（3）  2018（3）  2011（2）  2015（2） 
专利权人 QUANTUM ELEM.（5） NINGBO INST .（3） APPLIED MATE.（2） CHINA DONGFA.（2）
EMPIRE TECHN.（2） HAIRUI HIGHT.（2） KOREA INST S.（2） SHANGHAI INS.（2）
UNIV JILIN（2） UNIV SHANGHA.（2） UNIV XIDIAN（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Gas pipeline for transmitting process gas from gas supply source to reaction chamber of semiconductor device, has first section and third section that are respectively provided with first heating unit and second heating unit capable of independently controlling temperature.

YIN N

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Negative-pressure roll-to-roll preparation device for preparing graphene copper material, comprises pipeline, pay-off mechanism, take-up mechanism, heating mechanism, protective gas and carbon source supply mechanism, and valves.

WU Q, SONG S, MA Y

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Visualizing distribution and intrinsic orientation of periodically spaced one-dimensional structures by depositing electrically conductive solid film of imaging material onto surface of two-dimensional material, providing polarization microscope, and imaging layered composite at acquisition angles.

AMADO E, KRESSLER J

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Composite base system for thin film deposition device, has first base comprising top surface and bottom surface opposite to each other, and radio frequency heating coil coaxially surrounded around second base.

LIU L, ZHENG D, XU C