国家/地区 中国（9） 美国（2）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（8） H01L（3） B82Y（2）
C01B（2） C04B（2） C23F（2）
IPC C23C016/26（4） B82Y030/00（2） B82Y040/00（2）
C04B035/583（2） C04B035/622（2） C04B035/653（2）
C23C014/06（2） H01L021/02（2）
发明人 YU C（10）
公开年 2014（2） 2022（2）
申请年 2014（2）  2022（2） 
专利权人 CHINESE ACAD.（3） YU C（3） HU S C（2） LIN I（2）
SUNG C（2）

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Acid cleaning process of corrosion resistant stainless steel belt comprises performing solid solution treatment on stainless steel plate, annealing once, finish rolling, and secondary annealing and performing four stages of coating treatment.

YU C, JI F, XING Y, ZHANG X, WU M, LI Y, WU B, WANG Y, SHAN C, BEN H

Method for improving strong toughness of laser melting deposition aluminum alloy forming piece, involves grinding and polishing aluminum alloy substrate and cleaning using laser cladding device to clad dried composite powder on substrate.

LU H, CHEN J, YU C, WANG S, LI X, XU J

Uniform flow heat insulation device for graphene film growth device, has uniform flow cylinder whose inner portion is provided with steering mechanism, where upper end side wall of uniform flow cylinder is connected with air inlet pipe.

YU C

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Modified aqueous composite sealing agent contains methyl silicone resin, polytetrafluoroethylene, silica sol, graphene, catalyst, film-forming agent, lubricant, accelerator, metal corrosion inhibitor, and silane coupling agent.

YU C, HE C

Three-dimensional non-catalytic substrate-loading graphene film structure used for e.g. microelectromechanical system device comprises non-catalytic substrate, etched surface body three-dimensional structure and graphene thin film cover.

DU C, SHEN J, SHI H, YANG J, WEI D, YU C, SONG X, YU Y

Covering of three-dimensional structure substrate surface with graphene thin film involves cleaning and drying surface of three-dimensional structure substrate and placing in vacuum chamber of chemical vapor deposition device.

SHI H, JIANG H, YANG J, ZHANG Y, WEI D, DU C, LI Z, ZHU P, HUANG D, YU C

Direct conformal covering of graphene on needle tip surface for e.g. atomic force microscope electrically conductive needle tip involves cleaning needle tip surface, drying, placing in vacuum chamber, and discharging vacuum chamber air.

DU C, JIANG H, LI Z, SHI H, YANG J, ZHANG Y, WEI D, ZHU P, HUANG D, YU C

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J