国家/地区 中国（3） 韩国（3） 美国（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/02（6）
发明人 DONG Y（2）
公开年 2018（6）
申请年 2017（4）  2018（2） 
专利权人

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Direct growing method for large area graphene on oxide insulating substrate involves spin coating layer of polymethyl methacrylate (PMMA) film as an etching support layer after finishing growth of layer of graphene film on metal surface.

XU C, SUN J, DONG Y, XIE Y, PAN G, WANG Q, QIAN F

In situ preparation of electroless graphene thin film useful in flexible electronic device, comprises e.g. forming titanium catalyst layer by sputtering on substrate, and performing In-situ plasma assisted chemical vapor deposition.

YOON S G, PARK B J

Preparing nickel-based hydrophilic graphene film by cleaning surface of polycrystalline nickel foil, treating surface of polycrystalline nickel foil with surfactant, vacuumizing polycrystalline nickel foil in vacuum furnace and heating.

LI D, ZOU W, ZHOU X, YE Y, YE Z, ZOU A, RAO Y, PENG X, DONG Y, HONG Y

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P