国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/26（5） C30B025/18（4） H01L021/205（3）
B82Y030/00（2） B82Y040/00（2） C01B031/02（2）
C01B031/04（2） C23C016/02（2） C23C016/56（2）
C30B025/00（2） C30B029/02（2） H01L021/20（2）
H01L033/00（2）
发明人 FAN F Y（2） FAN S（2） GI Y（2）
WEI Y（2）
公开年 2013（7）
申请年 2013（4）  2012（3） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Low temperature chemical vapor deposition for graphene film involves doping surface of a flat metal substrate with a chemical agent in a protective atmosphere, annealing while substrate is in contact with carbon source, heating and cooling.

HUANG M

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y