国家/地区 美国（3） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 B82Y（6）
IPC B82Y040/00（6）
发明人 ELSAYED K A M（2） MAAROUF A A（2）
公开年 2023（6）
申请年 2022（5） 
专利权人 UNIV IMAM AB.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Depositing nano-graphene comprises flowing hydrocarbon precursors into reaction chamber to adsorb onto metal layer of substrate at specific temperature, where metal layer interacts with adsorbed hydrocarbon precursor.

SHARMA K, VARADARAJAN B N

Transparent electrode for solar cell, comprises transparent substrate and composite layer disposed on transparent substrate, where composite layer comprises graphene layer and set of nanoparticles, where nanoparticles are embedded in graphene layer and extend through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Preparing solar cell involves heating substrate deposited with nanoparticles, forming composite layer with graphene layer, cooling, disposing transparent substrate having quartz, glass and polymers such as polymethylmethacrylate, polystyrene, fabricating electrode, forming cathode and electrolyte.

ELSAYED K A M, MAAROUF A A

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S