国家/地区 韩国（26）
IPC部 C（26）
IPC大类 C23（26）
IPC小类 C23C（26） C01B（13） H01L（11）
H01M（6） B05D（3） B05B（2）
B21B（2） B21C（2） C23G（2）
IPC C23C016/26（13） C01B032/186（7） H01L021/02（7）
H01L021/285（6） H01L021/768（6） C23C016/02（5）
C23C016/44（4） C23C016/505（4） H01L023/532（4）
H01M004/38（4） H01M010/052（4） C23C016/511（3）
C23C016/56（3） C23C024/04（3） H01M004/36（3）
发明人 LEE C S（5） LEE C（4） BYUN K（3）
BYUN K E（3） KIM K（3） LEE J H（3）
SHIN K（3） SHIN K W（3） AHN S J（2）
AN S（2） IFUKU R（2） IMKIHYUN（2）
KIM D W（2） KIM Y（2） LEE J（2）
公开年 2023（26）
申请年 2022（14）  2021（11） 
专利权人 SAMSUNG ELEC.（8） NDT ENG AER.（2） TOKYO ELECTR.（2）

Current collector for lithium metal battery, has graphene single layer that is formed on conductive thin film, metal nanoparticles that are provided on graphene layer, and concave-convex portion including protrusion and concave portion.

JUNG H T, SUK J D, WU M H, KIM J Y, MOON S, JIN H Y, BOH K G

Method for manufacturing surface-patterned current collector, comprises etching and patterning current collector and coating carbon material on patterned current collector, where patterning by etching comprises electrochemical etching.

JIN A, SUNG G W

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Cathode active materials useful for secondary batteries, comprises carbon-based base material, silicon layer formed on carbon-based base material, and graphene provided on outside of silicon layer.

CHAE S

Synthesizing surface of aluminum oxide graphite for high-purity carbon materials, comprises e.g. raising temperature of reactor, placing aluminum oxide nanoparticles in inner center of reactor, and injecting reaction gas into reactor.

KIM C D, NAMKEE S

Thin film for negative electrode of lithium secondary battery, comprises first silicon oxide layer containing silicon oxide, silicon layer provided on one surface of first silicone oxide layer and containing silicon, and second silicon oxide layers.

YOUNG C K, LIM J

Antibacterial bag for storing seeds, has main body whose upper portion is provided with substrate, and oxidation inhibitory layer for suppressing oxidation of antibacterial layer that is formed with accommodation space.

PARK C Y, NA C S, SHIN W, KIM J H, KIM K M, PARK C, CHOI M G, JEONG S K

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO