国家/地区 世界知识产权组织（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/05（7）
发明人
公开年 2015（3） 2021（2）
申请年 2014（2） 
专利权人

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.

MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C

Layer stack used to grow graphene or carbon nanotubes that are used e.g. to make integrated circuit or printed circuit board interconnect, comprises substrate, protective layer, and attachment surface disposed between substrate and layer.

SILVA S R, AHMAD M

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G