国家/地区 中国（10） 美国（9） 日本（4） 韩国（4） 台湾（4） 世界知识产权组织（4） 欧洲专利局（EPO）（2）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B032/186（17）
发明人 DONG Y（2） IFUKU R（2） LIU P（2）
MATSUMOTO T（2）
公开年 2018（17）
申请年 2017（9）  2018（8） 
专利权人 TOKYO ELECTR.（2）

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Direct growing method for large area graphene on oxide insulating substrate involves spin coating layer of polymethyl methacrylate (PMMA) film as an etching support layer after finishing growth of layer of graphene film on metal surface.

XU C, SUN J, DONG Y, XIE Y, PAN G, WANG Q, QIAN F

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Continuous permeable graphene film comprises at least two layers of graphene and nanochannels or nanopores providing a fluid passage from one face of the film to the other.

SEO D H, PINEDA S, MURDOCK A, HAN Z J, OSTRIKOV K, XIE M, VAN DER LAAN T

Preparing nickel-based hydrophilic graphene film by cleaning surface of polycrystalline nickel foil, treating surface of polycrystalline nickel foil with surfactant, vacuumizing polycrystalline nickel foil in vacuum furnace and heating.

LI D, ZOU W, ZHOU X, YE Y, YE Z, ZOU A, RAO Y, PENG X, DONG Y, HONG Y

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Process for preparing graphene layer with better electrical conductivity, involves doping zone of graphene layer to form doped graphene zone including stabilized sheet resistance, where doping is carried out by surface of graphene layer.

LE POCHE H, CARELLA A, DIJON J, OKUNO H, RAUX E