国家/地区 美国（28） 韩国（24） 世界知识产权组织（21） 日本（18） 中国（13） 欧洲专利局（EPO）（7） 台湾（7） 德国（6） 加拿大（2） 西班牙（2） 法国（2） 英国（2）
IPC部 B（43）
IPC大类 C01（43）
IPC小类 C01B（43）
IPC C01B031/02（43）
发明人 CHIBA Y（3） KIM K H（3） MARTENS R I（3）
BACSA R（2） BYUNG J C（2） CHIBA G（2）
CHOI I S（2） HONG B H（2） HUNLEY D P（2）
KADONO K（2） KOBAYASHI T（2） LEE K J（2）
LIU Z（2） MAAROUF A（2） MARTENS R（2）
公开年 2013（43）
申请年 2012（24）  2011（11）  2013（8） 
专利权人 KOREA ADVANC.（5） JX NIPPON MI.（4） NIPPON MININ.（3） SRC CORP（3）
TE CONNECTIV.（3） TYCO ELECTRO.（3） UNIV SUNGKYU.（3） CENT NAT REC.（2）
INST NAT POL.（2） INT BUSINESS.（2） KOREA ADV IN.（2） MAAROUF A（2）
MARTYNA G J（2） NIPPON MININ.（2） SONY CORP（2） UNIV KENTUCK.（2）

Device e.g. graphene nanoribbons useful in high speed and low power electronics comprises substrate, and first graphene nanoribbon overlying the substrate, where the first graphene nanoribbon has specific width.

ZHANG Y

Graphene film, useful in a LCD element and electronic paper display device, comprises self-assembled monolayer formed on substrate, and graphene oxide thin films formed on self-assembled monolayer.

HWANG J O, KIM S O

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S