国家/地区 世界知识产权组织（13）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C01B（13）
IPC C23C016/54（13）
发明人
公开年 2022（4） 2013（2） 2018（2） 2021（2）
申请年 2021（4）  2012（2）  2013（2）  2017（2）  2019（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） APPLIED MATE.（2） HANWHA AEROS.（2）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Manufacture of steel strip for battery case, involves performing continuous roll-to-roll process by joining leading edge of coil of nickel-plated steel strip to trailing edge of preceding coil of nickel-plated steel strip in joining section.

WITTEBROOD A J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Graphene production facility for use in chemical vapor deposition of steam on rolls of substrate, comprises solar thermal collector formed by one mirror concentrating radiation solar on set of four concentric tubes.

CARLOS ERNESTO SOSA PEREZ C, DAVID TRISTAN GAGO D, SOSA PEREZ C E, TRISTAN GAGO D, CARLOS ERNESTO SOSA PEREZ C E

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Apparatus used for producing graphene, comprises e.g. substrate loading chamber having first rotating roll for loading multiple of individual substrates, roll chamber having second rotating roll, reaction chamber, and conveyor belt.

KIM K, LEE D, KIM K S, LEE D Y

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H