国家/地区 日本（9）
IPC部 C（9） B（6） H（6）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B031/02（7） C01B031/04（6） B82Y040/00（5）
C23C016/26（5） B82Y030/00（4） H01L021/205（4）
C01B032/186（3） H01L029/06（3） H01L051/30（3）
B21B001/40（2） B21B003/00（2） B32B043/00（2）
C22C009/00（2） C22C009/02（2） C22F001/08（2）
发明人 CHIBA G（2） CHIBA Y（2） YOSHIHIRO C（2）
公开年 2012（9）
申请年 2012（9）
专利权人 JX NIPPON MI.（2） NIPPON MININ.（2） NIPPON MININ.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Manufacture of multilayer graphene-coated substrate used as e.g. transparent conductive film and electroconductive film, involves laminating multilayer graphene obtained from multilayer graphene assembly on surface of substrate.

MURAMATSU K

Silicon carbide single crystal substrate for semiconductor element e.g. MOSFET, has graphene layer that is arranged between silicon carbide layer and support substrate.

OKINO K