国家/地区 日本（30）
IPC部 C（30）
IPC大类 C01（30）
IPC小类 C01B（30）
IPC C01B031/02（28） C23C016/26（18） C01B031/04（13）
B82Y030/00（10） B82Y040/00（10） H01L021/205（5）
B21B001/40（4） C01B032/186（4） C22C009/00（4）
C22C009/02（4） C22F001/08（4） H01B013/00（4）
B21B003/00（3） C22F001/00（3） C23C016/02（3）
发明人 CHIBA Y（5） CHIBA G（4） YOSHIHIRO C（3）
CHIBA YOSHIHIRO（2） HASEGAWA M（2） SATO M（2）
TSUKAHARA N（2） YAMADA T（2）
公开年 2013（16） 2012（9） 2014（5）
申请年 2012（30）
专利权人 JX NIPPON MI.（5） DOKURITSU GY.（4） NIPPON MININ.（4） NIPPON MININ.（4）
ULVAC INC（3） FUJITSU LTD（2） NIPPON MININ.（2） UNIV NAGOYA（2）

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Rolled copper foil for manufacture of graphene, is made of oxygen free copper whose ratio of maximum value of detection strength in two different specific peak values is set to predetermined range in positive pole figure.

CHIBA Y

Apparatus for manufacturing graphene film used for e.g. transparent electrode, has system for supplying film-forming material gas containing carbon, stage and counter electrodes, and device for applying direct current pulse voltage.

TSUKAHARA N

Graphene roll film has graphene film having wrinkle portion having specified width and central line average roughness, provided in base material.

YAMADA T, HASEGAWA M, TSUKAHARA N, SHIMADA N, YAZAWA K, KIM J H

Manufacture of graphene film used for e.g. gas barrier film, involves depositing graphene film on base material surface maintained at specified temperature and pressure by microwave surface wave plasma chemical vapor deposition method.

TSUGAWA K, YAMADA T, HASEGAWA M

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F