国家/地区 中国（6） 美国（4） 日本（3） 台湾（2） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C30B（8）
IPC C30B025/18（8）
发明人 DENG P（3） GUO H（3） LEI T（3）
ZHANG K（3） ZHANG Y（3） LV J（2）
公开年 2012（4） 2013（4）
申请年 2012（8）
专利权人 UNIV XIDIAN（4）

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of large-area graphene used for sealing gas and liquid, involves adding hetero-epitaxy film to quartz tube, heating, adding mixed gas of argon and chlorine, generating carbon layer, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y