国家/地区 美国（9）
IPC部 C（9）
IPC大类 C23（9）
IPC小类 C23C（9）
IPC C01B032/186（3） C23C016/02（3） C30B029/02（3）
H01L021/02（3） B82Y030/00（2） C23C016/04（2）
C23C016/26（2） C23C016/34（2） C30B025/02（2）
C30B025/18（2） C30B029/04（2） C30B029/38（2）
C30B029/40（2） C30B030/00（2） H01B001/06（2）
发明人
公开年 2021（9）
申请年 2020（6）  2021（2） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Radiating table designed with special water channel of alloy material, has heat dissipation pipe fitting to water pipe through groove, heat dissipation platform provided with several waterway annular grooves communicated with water pipe through groove.

ZHAO J, HU C, HU C Q, ZHAO J H

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.

CURRAN P

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X