国家/地区 美国（16） 韩国（12） 中国（9） 日本（9） 世界知识产权组织（7） 欧洲专利局（EPO）（4） 台湾（4）
IPC部 C（23）
IPC大类 C23（23）
IPC小类 C23C（23）
IPC C01B031/02（19） C23C016/26（16） H01B001/04（15）
B82Y040/00（14） B82Y030/00（11） C01B031/04（10）
H01B013/00（8） B82B003/00（3） C23C018/18（3）
H01B001/02（3） H01B005/14（3） H01L021/20（3）
B01J019/08（2） B05D003/00（2） B05D005/12（2）
发明人 FAN F Y（3） FAN S（3） JIANG K（3）
LIN X（3） LIN X Y（3） XIAO L（3）
HONG B（2） HONG B H（2） LEE K（2）
公开年 2012（23）
申请年 2011（16）  2012（5）  2010（2） 
专利权人 HANWHA TECHW.（3） HON HAI PREC.（3） HONGFUJIN PR.（3） SAMSUNG TECH.（3）
UNIV TSINGHU.（3） KOREA ADV IN.（2） SAMSUNG ELEC.（2）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Electrical conductor used in e.g. electrical connector comprises metallic substrate having surface, and coating containing graphene/carbon nanotube coating or blended graphene/carbon nanotube coating deposited on the surface.

HEMOND J H B, LOYD A N, MARTENS R I, WANG J, LLOYD A N, HERMOND J H B

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Formation of graphene wiring involves alternately laminating metal catalytic layer and graphene layer on substrate.

JUNG J W, LEE W J

Adsorption method of nanostructure with graphene structure to minute material, involves dispersing nanostructure which has graphene structure in liquid containing surfactant, and adsorbing nanostructure to surface of minute material.

YAMADA K, MURAKAMI H