国家/地区 中国（16）
IPC部 C（16）
IPC大类 C23（16）
IPC小类 H01J（16）
IPC C23C016/26（10） H01J037/32（7） H01J009/02（5）
B82Y030/00（4） H01L021/02（4） C01B032/186（3）
C23C016/02（3） C23C016/04（3） C23C016/30（3）
C23C016/44（3） C23C016/455（3） C23C016/505（3）
C23C016/52（3） C23C016/56（3） H01J001/304（3）
发明人 LI K（2） LI Z（2） NARKEVICIUTE I（2）
SONG G（2） VARADARAJAN B N（2） ZHANG Y（2）
公开年 2021（5） 2022（5） 2016（2）
申请年 2021（5）  2020（4）  2016（2） 
专利权人 LAM RES CORP（2） UNIV QINGDAO.（2）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Preparing transmission electron microscope carrier net containing ultra-clean graphene carrier layer useful in situ characterization and tracking of liquid phase reaction comprises e.g. combining transmission electron microscope carrier with graphene film on surface of iron(III) chloride solution.

REN Q, ZHANG Y, ZHAO P

Preparing petal-shaped graphene field emission cold cathode, comprises selecting and cleaning substrate, selecting silicon sheet and copper foil copper foil as substrate, and growing layer of copper film on substrate surface.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Preparing diamond-multilayer graphene composite cathode material e.g. used in emission display, involves grinding silicon substrate in diamond powder uniformly and compactly, putting grinded silicon substrate into suspension liquid made of diamond powder.

LIU H, GUAN L, WANG B, ZHANG W, XIONG Y

Preparing graphene field emission source useful in field emission cathode of electronic device e.g. display device, comprises slowly cooling carbon atom dissolved to metal material to form graphene layer by stage cooling, closing power supply to room temperature, and taking out metal material.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Electron-emitting element e.g. cold cathode-type electron source, has coating membrane that is film which transmits electron, and second electrode that is protective film of different material, and comprises electron emission surface.

MURAKAMI K, NAGAO M, KATSUHISA M, MASAYOSHI N

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z