国家/地区 日本（14） 世界知识产权组织（9） 美国（8） 中国（7） 欧洲专利局（EPO）（7） 加拿大（4） 韩国（4） 印度（3） 台湾（3） 西班牙（2） 墨西哥（2） 新加坡（2）
IPC部 C（14） H（14） B（7）
G（2）
IPC大类 C01（14）
IPC小类 C01B（14） H01L（8） B82Y（5）
H01M（5） C23C（3） H01B（3）
H01G（3） H05K（3） C08J（2）
C08K（2） C08L（2） C09D（2）
IPC C01B032/15（14）
发明人 KUBOTA Y（2） TAMAKI E（2）
公开年 2015（7） 2017（5） 2016（2）
申请年 2015（14）
专利权人 NAT INST ADV.（2） TORAY IND IN.（2）

Hollow component used for forming negative electrode active material, comprises hollow structure comprising accumulated graphene, and transition metal oxide particles positioned between accumulated graphene and on surface of graphene.

TANG J, QIN L C, SHAO Q G

Optical sensor used for detecting position and movement of target component, comprises field-effect transistor containing graphene channel and light-absorption layer including nitrogen functionalized-nanographene containing semiconductor.

TEZUKA H, MATSUI T

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J

Graphene wiring structure has multi-layer graphene portion whose outer surface is physically connected with side surface of orthogonal direction with respect to substrate of insulating film.

SAKAI T, YAMAZAKI Y, MIYAZAKI H, KATAGIRI M, KAJITA A, ISHIKURA T

Graphene powder for manufacturing paste for forming lithium ion battery electrode, has preset specific surface area measured by BET measurement, and oxygen-to-carbon element ratio measured by X-ray photoelectron spectroscopy.

YANG H, TAMAKI E, KUBOTA Y

Organic light-emitting element comprises anode containing graphene films having preset sheet carrier densities, hole injection layer, organic light emitting layer and cathode, laminated on transparent base material in order.

OKIGAWA YUKI, MIZUTANI WATARU, ISHIHARA MASATOU, HASEGAWA MASATAKA

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M

Preparation of graphene material used for component of electronic device e.g. energy storage device and energy generation device, involves exposing polymer to laser source and forming graphene.

KITTRELL C, LIN J, PENG Z, TOUR J M, HAYASHI K

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z