国家/地区 韩国（6） 美国（6） 世界知识产权组织（4）
IPC部 B（7）
IPC大类 B01（7）
IPC小类 B01J（7）
IPC C01B031/02（7）
发明人 LEE J（2）
公开年 2012（4） 2013（3）
申请年 2012（7）
专利权人 HANWHA AEROS.（2） HANWHA TECHW.（2） SAMSUNG ELEC.（2） SAMSUNG TECH.（2）

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S