国家/地区 韩国（38）
IPC部 B（38）
IPC大类 B32（38）
IPC小类 B32B（38）
IPC C23C016/26（38）
发明人 HONG B H（7） CHOI J（6） AHN J（3）
CHOI J Y（3） KANG J（3） KIM H（3）
LEE S（3） SHIN H（3） SHIN H J（3）
WOO Y S（3） YOON S（3） YOON S M（3）
AHN J H（2） BAE S（2） BAE S K（2）
公开年 2012（8） 2011（7） 2013（6） 2021（4） 2009（3） 2016（3） 2010（2） 2022（2）
申请年 2011（9）  2012（7）  2008（3）  2009（3）  2013（3）  2016（3）  2020（3）  2010（2）  2015（2）  2022（2） 
专利权人 GRAPHENE SQU.（6） SAMSUNG ELEC.（4） UNIV SUNGKYU.（4） HONG B H（3）
KOREA INST S.（3） UNIV SUNGKYU.（3） EV GROUP THA.（2） HEIQ MATERIA.（2）
KANG J（2） KOREA ADV IN.（2） KOREA ADVANC.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Graphene transformer comprises a core portion and a coil portion wound around an outer circumferential surface of the core portion, where the coil portion includes a base layer made of polyimide, and a first metal layer is disposed on base layer.

WOLPYO H

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Method for transmitting a transmission layer from a substrate, such as graphene layer, to a carrier substrate, such as glass substrate and ceramic substrate, involves transmitting a graphene layer from substrate to carrier substrate.

MOKKAPATI V R, POVAZAY B, UHRMANN T, ULLMANN T, MOKKAPATI V R S S, SARMA M V R, THOMAS A

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F