国家/地区 韩国（32）
IPC部 B（32）
IPC大类 B32（32）
IPC小类 B32B（32）
IPC C01B031/04（32）
发明人 CHOI J（6） CHOI J Y（5） HONG B H（4）
SHIN H（4） SHIN H J（4） AHN J（3）
CHIBA G（2） CHIBA Y（2） CHOI W（2）
CHOI W M（2） HAN G（2） HAN G H（2）
HONG B（2） KIM H K（2） LEE J K（2）
公开年 2011（8） 2012（8） 2013（5） 2009（3） 2010（3） 2016（3）
申请年 2011（8）  2012（7）  2009（4）  2010（4）  2013（3）  2015（3）  2008（2） 
专利权人 SAMSUNG ELEC.（7） UNIV SUNGKYU.（5） UNIV SUNGKYU.（3） AHN J（2）
GRAPHENE SQU.（2） HONG B H（2） JX NIPPON MI.（2） KOREA INST S.（2）
NIPPON MININ.（2） NIPPON MININ.（2） SAMSUNG TECH.（2）

Transfer method of graphene for laminating material and designing shape of object, involves adhering graphene to one side portion of imprint receptive seat, and passing imprint receptive seat and metal sheet through etchant to graphene.

KIM Y K, YONG K K, KIM Y

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A