国家/地区 韩国（9） 美国（8） 世界知识产权组织（7） 欧洲专利局（EPO）（5） 日本（4） 中国（3） 巴西（2） 加拿大（2） 印度（2） 墨西哥（2） 俄罗斯（2） 越南（2）
IPC部 B（15）
IPC大类 B82（15）
IPC小类 B82B（15）
IPC B82B003/00（14） C01B031/04（12） B82B001/00（7）
C01B031/02（6） B82Y030/00（5） B82Y040/00（5）
C01B032/182（3） B01J023/755（2） C01B032/184（2）
C01B032/192（2） C01B032/20（2） C23C016/18（2）
发明人 DAVIS M A（3） JEONG S（2） LEE J（2）
PARK I K（2） PARK J H（2） PARK S（2）
ROH Y（2） YEON S（2）
公开年 2014（15）
申请年 2014（15）
专利权人 DAVIS M A（3） SOLAN LLC（3） SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Synthesis of nano-structured polymers containing graphene involves reacting graphite oxide containing bound oxygen dispersed in solvent by ultrasounds, with vinyl monomer and vinyl aromatic monomer, in presence of strong inorganic acid.

GOFFREDI G, LONGO A, VALENTINO O, FELISARI R, CASALINI A

Manufacture of graphene hybrid material for e.g. for biological sensors involves preparing nanoparticles, biomaterial solution, and graphene oxide solution and mixing with biomaterial solution to form biomaterial-coated nanoparticles.

YUN Y, SONG K, YUN Y J, SONG K B

Forming a graphene device, used to fabricate electronic device, comprises e.g. patterning a substrate to form many elements and trenches on substrate, and segmentedly overlaying a carbon source and initiating material on each element.

DAVIS M A

Forming graphene device includes creating foundation material on substrate having crystallographic or amorphic state, causing the material to adopt favored crystallographic or amorphic state and forming first graphene stack in first region.

DAVIS M A

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Making graphene oxide or flakes, comprises placing graphite into water containing oxidizing agent, mechanically exfoliating graphite into graphene flakes, and separating graphene flakes from water.

BLAIR R

Forming graphite based structure on substrate comprising many zones, used in e.g. solar cells, comprises doping first zone with carbon in accordance with many dopant profiles and generating graphene sublayers by heating.

DAVIS M A

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J