国家/地区 欧洲专利局（EPO）（8）
IPC部 B（8）
IPC大类 B82（8）
IPC小类 B82B（8）
IPC B82B003/00（8） C01B031/04（8） B82Y040/00（7）
C23C016/26（7） B82Y030/00（5） C01B031/02（4）
C01B032/186（4） C30B029/02（4） C01B032/188（3）
H01L021/20（3） B32B009/00（2） B32B027/06（2）
B82B001/00（2） B82Y010/00（2） C01B031/00（2）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2015（3） 2011（2） 2012（2）
申请年 2009（2）  2012（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Method for manufacturing laminate of graphene to produce e.g. electronic device product, involves providing target substrate to form first composite comprising target substrate, and removing of first composite from growth substrate.

HAQUE S M, WHITE R, BOWER C, HAQUE S

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V