国家/地区 韩国（18） 美国（9） 世界知识产权组织（8） 欧洲专利局（EPO）（4） 加拿大（3） 日本（3）
IPC部 B（21） C（21） H（8）
IPC大类 B01（21） C01（21） B82（9）
H01（7） C23（4） C09（2）
IPC小类 B01J（21）
IPC B01J019/12（21）
发明人 KIM H（4） OH I K（3） FISHER T S（2）
GON S J（2） KIM H J（2） KIM J（2）
LEE S S（2） LIM S H（2） OH I（2）
PARK M（2）
公开年 2013（10） 2014（7） 2012（4）
申请年 2012（21）
专利权人 KOREA ADVANC.（4） FISHER T S（2） KOREA ADV IN.（2） KOREA INST S.（2）
PURDUE RES F.（2）

Apparatus for producing graphene, comprises plasma arc generation unit to generate plasma arc on substrate surface, carbon source supply unit to supply carbon source and laser irradiation unit to irradiate laser and dissociate carbon atoms.

YEONG L M, LEE M Y

Thermal-plasma manufacture of graphene, involves providing thermal plasma torch inside reactor, injecting methane/hydrogen and argon/hydrogen through different paths in torch nozzle, and generating thermal plasma by heating torch.

PARK D W, KIM T, BAEK J

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Producing dry-type ionic polymer actuator, comprises producing graphite oxide, producing graphene oxide, producing graphene oxide buckypaper, generating graphene buckypaper, forming electrodes and ionic polymer between electrodes.

JEON J H, JUNG C Y, OH I K

Manufacture of graphene involves supplying process gas containing carbon source on substrate, and pre-processing substrate using oxidative gas plasma to form graphene layer on substrate.

CHUN S H, KIM Y S

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacture of graphene involves preparing expanded graphene, mixing with metal ion hydrate, heating expanded graphite such that metal ion is inserted in interlayer of expanded graphene, and removing inserted metal ion from interlayer.

HUR S H, JEON S, KONG B S, SONG S H

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacturing graphene oxide thin layer, by depositing graphene oxide film on substrate of oxidized graphite target by radio frequency magnetron sputtering, and performing microwave irradiation on oxidized graphite target to form laminate.

HAHN S H, KIM S W, NGUYEN T K