国家/地区 韩国（9） 美国（4） 世界知识产权组织（4） 加拿大（2） 欧洲专利局（EPO）（2）
IPC部 B（10） C（10） H（4）
IPC大类 B01（10） C01（10） H01（3）
B82（2） C23（2）
IPC小类 B01J（10）
IPC B01J019/12（10）
发明人 FISHER T S（2） KIM H（2）
公开年 2013（10）
申请年 2012（10）
专利权人 FISHER T S（2） KOREA ADVANC.（2） PURDUE RES F.（2）

Manufacture of graphene involves preparing expanded graphene, mixing with metal ion hydrate, heating expanded graphite such that metal ion is inserted in interlayer of expanded graphene, and removing inserted metal ion from interlayer.

HUR S H, JEON S, KONG B S, SONG S H

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacturing graphene oxide thin layer, by depositing graphene oxide film on substrate of oxidized graphite target by radio frequency magnetron sputtering, and performing microwave irradiation on oxidized graphite target to form laminate.

HAHN S H, KIM S W, NGUYEN T K

Producing graphene useful for producing supercapacitor, preferably supercapacitor electrode, comprises ultrasonically dispersing graphite oxide in a polyol solvent, adjusting pH and examining microwave pulses at predetermined time intervals.

BIN C W, KIM S, CHO W B

Manufacturing a metal wire, comprises forming graphene in a polymer layer surface and then irradiating, and coating a carbon source polymer on a metal wire or the board by spin coating, dip-coating or spray coating.

KIM S M, YUN K S, JUN S W, YUN K

Material useful to provide refrigeration, and for photovoltaic or thermionic power generation, comprises carbon allotrope (graphene or graphite) doped with boron nitride, and an alkali metal (potassium) intercalated within carbon allotrope.

FISHER T, FISHER T S

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Processing of graphene sheet-type material used for e.g. semiconductor device, involves irradiating ultraviolet-ray to surface of graphene sheet-type material in atmosphere containing active substance and modifying surface layer.

ASANO T

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S