国家/地区 美国（6） 中国（4） 韩国（4）
IPC部 C（8） H（5） B（3）
IPC大类 C01（8） C23（8） H01（5）
C30（3） C25（2）
IPC小类 C01B（8）
IPC C23C014/34（8）
发明人
公开年 2016（5） 2017（3）
申请年 2016（8）
专利权人

Manufacture of graphene sheet involves laminating nickel thin film on silicon dioxide film provided on surface of silicon substrate, laminating fullerene thin film on nickel thin film, and annealing resultant laminated structure.

JOONGKEE L, WONCHANG C, HUNGI J, CHAIRUL H, JAEYOUNG W, JIYOUNG K, JOOMAN W, AYOUNG K

Method of manufacturing coating layer structure applied to machine element, involves locating continuous graphene structure layer between metal substrate and coating layer to act as buffer structure between substrate and coating layer.

HUANG Y, HU C, HU Q, HUANG Y C, HU C L

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Metal alkene carbon thermal film useful in mobile phones, tablet personal computers, TVs and other consumer electronics products, comprises at least one layer of graphene film and at least one layer of metal film.

ZHANG X, ZENG J

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J