国家/地区 台湾（8）
IPC部 C（8） H（6） B（2）
IPC大类 C01（8） H01（6） C23（2）
C30（2） H05（2）
IPC小类 C01B（8）
IPC C01B032/182（8）
发明人
公开年 2022（7）
申请年 2022（8）
专利权人 TAIWAN SEMIC.（3）

Use of polyalkylene oxides which have aromatic radical as dispersant for graphene material.

LEHMANN K, SCHUMANN S, LEICH V, BREUERS V, HOENIG J, HELLMANN L, HOVEN T, SEIDENSTICKER P

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Graphene flake for regulating zero-point potential energy, has multi-component material surface charge modulation layer that is combined on surface of target object to modulate mesopotential of target surface.

CHANG C, TSENG I, SU Y

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Integrated chip comprises substrate, first conductive component above substrate and second conductive component, upper portion of substrate and transversely adjacent to first conductive component where concave hole transversely separating first conductive component and second conductive component.

SUI X, LI M, CHUNG C, LU M, YANG S, SHUE S, LEE M

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H