国家/地区 中国（38）
IPC部 C（38）
IPC大类 C01（38） H01（12） B82（5）
C04（4） C23（3） C30（3）
IPC小类 C01B（38）
IPC C01B031/04（33） H01L021/02（7） B82Y040/00（5）
C04B041/50（4） C04B041/85（3） C23C016/26（3）
C01B032/225（2） C23C016/02（2） C23C016/56（2）
C30B025/18（2） H01L021/205（2） H01L021/324（2）
H01M004/38（2） H01M004/587（2） H01M004/62（2）
发明人 LEI T（38）
公开年 2012（20） 2013（13） 2018（2） 2020（2）
申请年 2012（23）  2013（9）  2020（3）  2018（2） 
专利权人 UNIV XIDIAN（32） DATONG XINCH.（4） DENG P（2） GUO H（2）
LEI T（2） ZHANG K（2） ZHANG Y（2）

Preparation of coral-like palladium selenide compound used in catalysis, involves dispersing graphene oxide in deionized water and stirring evenly, adding palladium source, weak reducing agent, strong reducing agent and alkali to solution.

XIONG J, GUO Y, DU X, HUANG J, LEI T, CHEN W, YAN C, WU C, WANG X

Preparation of lithium ion negative electrode material using tin-graphene composite material involves grinding tin, graphene, graphite and carbon black, performing graphitization, extruding, roasting, carbonizing, heating, and pressing.

WEI J, ZHANG J, MIN J, ZHANG P, PANG Z, WU J, LIU W, JI Y, XU B, LV X, LEI T, HUO Y, ZHANG Y, CHEN Y

Preparation of graphene oxide silicon-carbon composite anode material by ball milling powder, drying, sieving, wet mixing with ethanol liquid medium, pickling in acid solution, mixing and adding oxidant to carry out oxidation intercalation.

WEI J, ZHANG J, MIN J, ZHANG P, PANG Z, WU J, LIU W, JI Y, LEI T, ZHANG Y, LV X, HUO Y, XU B, MENG P

Preparing expandable graphite using graphene oxide or nano carbon powder, comprises e.g. milling graphene oxide powder, nano carbon powder, special graphite powder and graphite flake by grinding device.

MIN J, ZHANG P, PANG Z, WU J, LIU W, JI Y, LEI T, ZHANG Y, HUO Y

Preparing expanded graphite by using graphene composite material comprises taking e.g. graphite powder, squama graphite, and de-ionized water, heating, stirring, filtering, washing, drying, discharging, collecting and controlling.

MIN J, ZHANG P, PANG Z, WU J, LIU W, JI Y, LEI T, HUO Y

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Preparation of large-area graphene used for manufacturing microelectronic devices and biological sensors, involves cleaning silicon substrate, placing in deposition reaction chamber, introducing propane and silane gas, and annealing.

GUO H, LEI T, LIU J, ZHANG F, ZHANG Y

Preparation of large-area graphene used for biological, optical and electrical sensor, involves cleaning silicon carbide, heating, carrying out hydrogen etching treatment, mixing argon and carbon tetrachloride, plating and annealing.

GUO H, LEI T, LIU J, ZHANG Y, ZHANG C

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C