国家/地区 韩国（16）
IPC部 B（16）
IPC大类 B01（16） C01（16） H01（7）
C23（4） B82（2）
IPC小类 B01J（16）
IPC B01J019/08（16）
发明人 JUNG M（4） MOON J（4） PARK W（4）
RHO J（4） SEO B（4） CHOI I S（2）
CHOI J H（2） HWANG I T（2） JUNG C H（2）
LEE K J（2）
公开年 2013（16）
申请年 2011（7）  2012（7）  2013（2） 
专利权人 LG ELECTRONI.（4） KOREA ADV IN.（2） KOREA ADVANC.（2） KOREA ATOMIC.（2）
KOREA HYDRO .（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Graphene transfer method involves forming graphene on substrate, coating mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing substrate and protective layer.

KIM U J, HUR J H, KIM J E, ROH Y G, PARK Y S, LEE C W, LEE J S, CHEON S M

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Device, useful for producing graphene, comprises a current supply unit for supplying current to a formation area through a contact unit, and a storage unit that receives metal catalyst in roll state, where contact unit contacts chamber.

RHO J, PARK W, JUNG M, SEO B, MOON J

Manufacture of graphene used for e.g. thin conductive film, transparent electrode, memory device, solar cell, organic light-emitting device, and biodevice, involves irradiating gamma-ray to graphene oxide solution and reducing.

CHOI J H, HWANG I T, JUNG C H, PARK Y W

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Device, useful for preparing a graphene, comprises chamber, exhaust outlet, winding unit arranged in locking position, gaseous carbon source placed into chamber with slit, and carbon fiber heating unit connected with extraction unit.

CHOI D G, DAI K C

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S