国家/地区 美国（7） 世界知识产权组织（6） 韩国（5） 欧洲专利局（EPO）（4） 日本（4） 加拿大（2） 中国（2）
IPC部 B（8）
IPC大类 B32（8）
IPC小类 B32B（8）
IPC B32B009/04（8）
发明人
公开年 2010（3） 2011（3） 2009（2）
申请年 2009（8）
专利权人

Manufacture of graphene used for e.g. photoelectric cell, involves forming carbon-dissolved metal thin film on substrate, and forming laminate structure on substrate by thermal-treating carbon-dissolved metal thin film.

KIM K B, KIM H M

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Composite material, useful for producing graphene layers material, comprises a layered double hydroxide or a layered silicate and a polyacrylonitrile, which is at least partially decomposed to graphene layers.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUTER O F

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W

Nanocomposite material useful in energy storage device such as electrochemical device and lithium ion battery, comprises metal oxide bonded to graphene layer.

AKSAY I A, CHOI D, LIU J, WANG D, YANG Z, AKSAY I, GRAFF G L, NIE Z, VISWANATHAN V V, ZHANG J, XU W, KIM J Y

Graphene material in the form of sheet, ribbon or polyphenylene molecule, films, optical and electronic devices is pristine in the interior of the plane and functionalized at its edges.

DAI H, LI X, SUN X

Producing reduced graphene oxide film used in e.g. sensors involves providing mixture of graphene oxide platelets, water, and organic solvent; spin coating the mixture and allowing water and solvent to evaporate; and repeating spin coating.

ROBINSON J T, SNOW E S

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M