国家/地区 欧洲专利局（EPO）（7）
IPC部 B（7）
IPC大类 B32（7） C01（7） C23（4）
B82（3） H01（3） B29（2）
B44（2） C25（2）
IPC小类 B32B（7）
IPC B32B043/00（7）
发明人 KIM H（2）
公开年 2012（2） 2017（2）
申请年 2012（3）  2017（2） 
专利权人

Release of graphene layer from template substrate, for e.g. circuits, involves soaking graphene layer and template substrate in water such that water is intercalated between substrate and layer, and subjecting to delamination process.

BREMS S, HUYGHEBAERT C, VERGUTS K, DE GENDT S

Method for transferring graphene from surface of substrate to other substrate, involves affixing growth substrate onto surface of transitory substrate, delaminating graphene layer from substrate, and transferring layer onto target surface.

LERNER M, PAN D, GOLDSMITH B, AFSAHI S J

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Method for manufacturing laminate of graphene to produce e.g. electronic device product, involves providing target substrate to form first composite comprising target substrate, and removing of first composite from growth substrate.

HAQUE S M, WHITE R, BOWER C, HAQUE S

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Roll-to-roll transfer of graphene for producing graphene roll, involves transferring graphene layer on material to substrate by passing through roller portion, immersing obtained laminate into etching solution, and removing material.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, JANG H, JANG S, KOO J B, HONG B, KIM H, HUI H B, HYEON A J, GANG B S, GEUN K H