国家/地区 美国（12）
IPC部 B（12）
IPC大类 B82（12） C01（12） H01（7）
B01（3） C09（3） C23（3）
C25（2） H05（2）
IPC小类 B82Y（12）
IPC B82Y040/00（12）
发明人 LEE J（12）
公开年 2010（2） 2011（2） 2012（2） 2014（2） 2015（2）
申请年 2011（3）  2010（2）  2013（2）  2014（2） 
专利权人 SAMSUNG ELEC.（6） KOREA INST S.（4） LEE J（3）

Manufacturing graphene structure involves providing gas including semiconductor material and gas including carbon into reaction chamber, and performing chemical vapor deposition to form core of semiconductor material and shell of graphene.

LEE E, CHOI B, LEE J, WHANG D

Production of graphene involves applying physical force to liquid dispersion of dispersing agent containing polyaromatic hydrocarbon oxide, and carbon-based material comprising graphite, and forming graphite into nano graphene flakes.

SOHN K N, YOO K H, KWON W J, LEE K S, YANG S B, KIM I Y, LEE M J, LEE J Y, SOHN K, YOO K, KWON W, LEE K, YANG S, KIM I, LEE M, LEE J, LI M, LI J

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Random graphite, which is a type of graphite comprising three-dimensionally random graphene layers, useful for graphitic intercalation compound (GIC) such as electrodes for lithium-ion battery.

LEE J, WON J, LEE B, LEE J K, WON J S, LEE B B

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Fabricating graphene ribbons involves preparing carbon structure in which graphene ribbon is spirally grown, revealing tube shape; and applying energy to unroll the graphene helix into the graphene ribbons.

LEE J, LEE K, LEE S, KAP L J, LEE K I, LEE S H