国家/地区 韩国（28） 美国（25） 中国（16） 日本（16） 世界知识产权组织（14） 欧洲专利局（EPO）（10） 印度（6） 墨西哥（5） 俄罗斯（5） 台湾（5） 西班牙（3） 巴西（2）
IPC部 C（35）
IPC大类 C01（35）
IPC小类 C01B（35）
IPC C01B031/02（35）
发明人 HONG B H（6） VEERASAMY V（4） VEERASAMY V S（4）
AHN J（3） BAE S K（3） CHUNG H（3）
CHUNG H J（3） HEO J（3） HEO J S（3）
KIM H K（3） KIM K S（3） SEO D（3）
SEO S（3） SEO S A（3） WOO Y（3）
公开年 2011（35）
申请年 2010（19）  2011（11）  2009（5） 
专利权人 SAMSUNG ELEC.（8） UNIV SUNGKYU.（8） GUARDIAN GLA.（4） GUARDIAN IND（4）
GUARDIAN IND.（4） UNIV SUNGKYU.（4） GRAPHENE SQU.（3） SAMSUNG TECH.（3）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） VEERASAMY V .（2）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U