国家/地区 中国（10） 美国（9） 世界知识产权组织（9） 韩国（5） 欧洲专利局（EPO）（4） 日本（2） 波兰（2） 台湾（2）
IPC部 C（17） B（9） H（7）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B031/04（17）
发明人 DENG P（3） GUO H（3） KELBER J（3）
LEI T（3） ZHANG K（3） ZHANG Y（3）
ATRASZKIEWICZ R（2） DYBOWSKI K（2） KULA P（2）
MODRZYK W（2） PIETRASIK R（2）
公开年 2012（8） 2013（7） 2014（2）
申请年 2012（17）
专利权人 UNIV NORTH T.（3） UNIV XIDIAN（3） KELBER J（2）

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Separating graphene film from liquid graphene-forming matrix involves upon completion of heating/adding hydrocarbon mixture, and during cooling, sliding mould frame over surface of liquid forming matrix, and lifting mould frame above matrix.

ATRASZKIEWICZ R, DYBOWSKI K, KLINOWSKI B M, KULA P, MODRZYK W, PIETRASIK R, ZAWISTOWSKI P Z

Method for producing graphene layer, involves fixing liquid metal on solid substrate or ceramic metal, fixing outer layer of liquid metal or alloy metals at melting point, and forming multi-layer in graphene forming die.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, MODRZYK W

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Preparation of graphene, involves directly converting amorphous carbide into graphene at low temperature and normal pressure under halogenation condition.

MU S, PENG T

Composition for controlled growth of graphene monolayers on a metal oxide surface, comprises a substrate, a metal oxide formed on the substrate, and graphene formed on the metal oxide.

JEFFRY K, KELBER J

Growing a one or two monolayer film of graphene on a substrate, comprises depositing a first layer of graphene on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate.

KELBER J