国家/地区 美国（29） 世界知识产权组织（22） 中国（18） 韩国（12） 日本（11） 欧洲专利局（EPO）（9） 台湾（7） 法国（5） 德国（4） 西班牙（2）
IPC部 C（36）
IPC大类 C01（36）
IPC小类 C01B（36）
IPC C01B031/04（36）
发明人 HONG B H（4） AHN J（3） AHN J H（3）
BAE S K（3） FAN F Y（3） FAN S（3）
JIANG K（3） LIN X（3） LIN X Y（3）
XIAO L（3） BACSA R（2） BAE S（2）
DING G（2） HONG B（2） JIANG M（2）
公开年 2012（19） 2011（9） 2013（8）
申请年 2011（36）
专利权人 CENT NAT REC.（4） UNIV SUNGKYU.（4） EMPIRE TECHN.（3） HON HAI PREC.（3）
HONGFUJIN PR.（3） SAMSUNG TECH.（3） UNIV TSINGHU.（3） CHINESE ACAD.（2）
CNRS CENT NA.（2） COMMISSARIAT.（2） GRAPHENE SQU.（2） HANWHA TECHW.（2）
INST NAT POL.（2） INT BUSINESS.（2） SAMSUNG ELEC.（2） SHANGHAI INS.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Formation of graphene layer for electrode of e.g. emitter layer system, involves forming amorphous carbon layer on substrate by physical vapor deposition, and carrying out flash annealing in atmosphere of controlled composition.

SCHREIL M, BURGHART M, KAUFMANN M

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y