国家/地区 日本（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/15（7）
发明人 AIDA H（4） AOTA N（4）
公开年 2017（4）
申请年 2016（4）  2015（2） 
专利权人 NAMIKI SEIMI.（4）

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Composite comprises single crystal sapphire substrate having film surface with surface roughness below preset value, metal film grown on film formation surface, and graphene film grown on metal film.

AOTA N, AIDA H

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V