国家/地区 台湾（8）
IPC部 C（8）
IPC大类 C01（8） H01（4） B82（2）
IPC小类 C01B（8）
IPC C01B032/158（8）
发明人
公开年 2021（3） 2022（2）
申请年 2021（3）  2019（2） 
专利权人

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Device used for active modification of thermal radiation comprises substrate, polymeric permeable membranes infused with ionic liquid electrolyte, electrodes comprising carbon nanotubes, and protective encapsulation layer.

JOHNSTONE J, DALTON A, LYNCH P, LARGE M, OGILVIE S

Elastomeric composition for manufacturing articles, contain carbon nanostructures or their fragments comprising multiwalled carbon nanotubes crosslinked into branched, interdigitated, entangled and/or common wall-sharing polymeric structure.

CHEN L, LI J, KYRLIDIS A, DOSHI D A, ZHANG P

Carbon material useful in conductive composition for forming conductive film and used in electricity storage device, comprises carbon hexagonal network surface as basic framework, where boron element is doped to replace carbon element.

YASUYUKI M, HIROTO W, YUKA M, MOROISHI Y, WATANABE H, MIYAFUSA Y, MIYAFUSAYUKA

Composite graphene conductive agent used for preparing conductive slurry of lithium batteries, comprises carbon black, carbon nanotubes, and graphene.

HSU C L, LIN P C, LIN P

Mesh material used as sieve mesh for sieves, and as screen gauze for screen plates, comprises mesh fabric, and coating layer containing carbon nanotubes and/or graphene, formed on surface of mesh fabric.

YOSHIOKA Y, MOTOJIMA N, NAKAYAMA T

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T