国家/地区 日本（28） 世界知识产权组织（28） 美国（25） 中国（20） 欧洲专利局（EPO）（17） 韩国（17） 加拿大（8） 台湾（7） 印度（5） 澳大利亚（3） 巴西（3） 墨西哥（3） 西班牙（2） 香港（2） 俄罗斯（2） 新加坡（2）
IPC部 C（35） B（26） H（18）
D（2） G（2）
IPC大类 C01（35） B82（19） H01（18）
B01（6） C08（5） C09（4）
B05（2） B22（2） B29（2）
C02（2） C07（2） D01（2）
G01（2）
IPC小类 C01B（35）
IPC C01B032/182（35）
发明人 BLAIR R（2） KUBOTA Y（2） LI D（2）
LIN J（2） LIN Y（2） SATO S（2）
TANG J（2） TANG Y（2）
公开年 2014（35）
申请年 2013（18）  2014（16） 
专利权人 FUJITSU LTD（3） BLAIR R（2） DOKURITSU GY.（2） DOKURITSU GY.（2）
GARMOR INC（2） JINAN SHENGQ.（2） LIN Y（2） NAT INST ADV.（2）
NAT INST MAT.（2） TORAY IND IN.（2） UNIV MONASH（2）

Reduced graphene oxide-silver phosphate used for photodegradation of organic textile dyes, comprises preset amount of reduced graphene oxide and silver phosphate.

DAS D P, SAMAL A, DAS J, DASH A

Separating graphene used for e.g. semiconductor device, comprises providing container including graphite particle, graphene and solvent, separating graphite particles from container using magnetic field, and discharging solvent from outlet.

KITAURA H, NISHIKI N, NISHIKAWA K, NAKAYA K, TANAKA A, NAKATANI K, NISHIGI N, TANAGA A

Production of graphene hollow structure body for graphene spherical hollow body integrated electrode and graphene spherical hollow body integrated capacitor involves mixing and dispersing polymer molding and graphene oxide powder.

SHAO Q G, QIN L C, TANG J

Graphene powder used as conductive support agent of lithium-ion battery electrode, is formed by adhering dispersing agent having quinophthalone skeleton and polar group to graphene surface.

SHIGETA K, KUBOTA Y

Graphene modified thermoplastic phenolic resin preparation for friction material comprises mixing phenol compound, aldehyde compound, and acid catalyst to obtain phenolic resin, and mixing phenolic resin and graphite.

TANG Y, JIANG C, LIU W, SONG Q

Synthesis of nano-structured polymers containing graphene involves reacting graphite oxide containing bound oxygen dispersed in solvent by ultrasounds, with vinyl monomer and vinyl aromatic monomer, in presence of strong inorganic acid.

GOFFREDI G, LONGO A, VALENTINO O, FELISARI R, CASALINI A

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Formation of modified graphene surface used for forming graphene layer for device e.g. nanoelectromechanical systems, involves providing defect-free graphene monolayer, and providing molecules comprising binding group in solvent.

SCHNEIDER G F, DEKKER C, DECKER C

Manufacture of graphene quantum dots used for road stickers, road signs, coatings, clothing, paints and photographic processing materials, involves exposing carbon source chosen from coal and coke to oxidant.

TOUR J M, YE R, XIANG C, LIN J, PENG Z, HAYASHI K, CERIOTTI G

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y