国家/地区 中国（28） 韩国（4） 美国（3） 世界知识产权组织（2）
IPC部 C（34）
IPC大类 C01（34） G01（22） B82（14）
B01（9） C09（7） G06（6）
G03（5） H01（5） B23（2）
C23（2）
IPC小类 C01B（34）
IPC C01B032/184（34）
发明人 CHEN L（3） LIU X（3） KIM H（2）
KIM H Y（2） KIM S K（2） LEE S M（2）
LI J（2） LI W（2） MI K H（2）
ZHANG B（2） ZHANG L（2） ZHANG Q（2）
公开年 2022（34）
申请年 2022（25）  2021（8） 
专利权人 KOREA ELECTR.（2） UNIV SUZHOU .（2）

Use of nickel cobalt sulfide doped nitrogen and sulfur-reduced graphene oxide nanomaterials in visual detection of glucose.

YE H, LIU T, ZHANG L, WANG X

Sampler for graphene production device, has sampling portion that is set to be capable of extracting material conveyed by conveying pipeline into sampling cavity through feeding port and discharged by discharging port.

SONG Y, JIANG Y, PU F, KANG S

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Preparing magnetic graphene quantum dot for preparing imaging contrast agent and in-vitro diagnostic probe, involves subjecting ferrous ascorbate aqueous solution to hydrothermal reaction, where contrast agent is nuclear magnetic resonance-fluorescence double-mode enhanced imaging contrast agent.

XIE X, DING G, DONG H, YANG S, LI Y

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Aluminium graphene uniform temperature plate for flat computer internal heat dissipation, has graphene layer arranged between aluminum-based upper plate and aluminum-based lower plate, and cross-linking holes provided with aluminum-based connecting particles.

WANG G, XU X

Preparing bamboo forest-shaped graphene tube array used in the flexible wearable electronic device, involves preparing the first precursor nanowire, exchanging first portion in the first precursor nano-wire into a metal ion with catalytic activity by ion exchange method.

ZHAO C, QIN Q, REN D, HUANG F

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Laser-induced graphene in-situ processing detection device, has ball screw whose transmission end is connected with baffle, where baffle is fixedly connected with connecting rod, and distance measuring sensor connected with power source end.

GAO C, FEI D, LIU X, SUN B, ZHANG Q

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K