国家/地区 日本（156）
IPC部 C（156） B（98） H（73）
D（11） G（9） A（8）
F（3）
IPC大类 C01（156） H01（72） B82（64）
B01（35） C08（29） C23（21）
C09（20） C07（16） B32（15）
D01（11） B05（10） C25（9）
C30（8） C04（7） G01（7）
IPC小类 C01B（156）
IPC C01B032/184（156）
发明人 JANG B Z（8） ZHAMU A（8） YAMAGUCHI J（7）
ZHANG J（6） TANG Y（5） TOUR J M（5）
TATENO Y（4） XU R（4） FASEL R（3）
FENG X（3） GAO C（3） KOBAYASHI H（3）
LEE J（3） LI J（3） LIU D（3）
公开年 2021（35） 2015（26） 2017（21） 2016（16） 2013（11） 2018（10） 2014（8） 2020（8） 2012（5） 2022（5） 2023（4） 2011（3） 2010（2） 2019（2）
申请年 2020（24）  2015（23）  2017（17）  2014（16）  2013（15）  2019（14）  2016（12）  2021（9）  2012（8）  2011（6）  2022（5）  2010（3）  2018（3） 
专利权人 FUJITSU LTD（11） NANOTEK INST.（8） JANG B Z（6） ZHAMU A（6）
JINAN SHENGQ.（5） UNIV RICE WI.（5） UNIV RICE WI.（5） SUMITOMO ELE.（4）
YAZAKI CORP（4） BASF SE（3） DENSO CORP（3） JINAN SHENGQ.（3）
JINAN SHENGQ.（3） KOBAYASHI H（3） NAT INST ADV.（3） NAT INST MAT.（3）
NISSAN CHEM .（3） SEMICONDUCTO.（3） UNIV MEIJO（3） UNIV ZHEJIAN.（3）

Production of graphene nanoribbons used in semiconductor device e.g. field effect transistor for electronic devices, involves synthesizing polyaromatic-based polymer by eliminating specific group from polymer, and bonding carbon atoms of aromatic ring from which specific group is eliminated.

YAMAGUCHI J

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Producing graphene material used in graphene electrode for electric double layer capacitor, by preparing graphene oxide, heat-treating graphene oxide, dispersing heat-treated graphene oxide in dispersion medium, and hydrothermally treating thermally reduced graphene oxide dispersion.

JIE T, SHIQI L, KUN Z, YUKINORI H, YORISHIGE M, TANG J, LIN S Q, ZHANG K, HATO Y, MATSUBA Y

Heat dissipation component used for e.g. battery, comprises substrate comprising metal, and composite material comprising multilayer graphene layer in which two or more layers of graphene are laminated, and amorphous carbon wall portion adhered to graphene layer in circumferential direction.

WATANABE J

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Production of substituted anthracene compound used as precursor for producing graphene nanoribbons, involves converting amino group and hydrogen atom bonded to carbon atom of anthracene-1,4,5,8-tetramine compound.

YAMAGUCHI J

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y

Method for producing graphene aggregate from collection of graphite particles and extracting each graphene from graphene aggregate to have scaly graphite particles on surface of two parallel plate electrodes, involves obtaining each graphene covered with group of fine crystals of organic compound.

KOBAYASHI H