国家/地区 美国（5） 中国（4） 韩国（4） 欧洲专利局（EPO）（3） 世界知识产权组织（3） 台湾（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C23C014/02（7）
发明人 BOYD D A（2）
公开年 2013（2） 2014（2） 2021（2）
申请年 2013（2） 
专利权人 CALIFORNIA I.（2）

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A