国家/地区 韩国（4） 美国（4） 世界知识产权组织（4） 中国（3） 日本（3）
IPC部 C（6）
IPC大类 C01（6） C23（6） B01（2）
B32（2） B82（2） H01（2）
IPC小类 C01B（6）
IPC C23C016/26（6）
发明人 KIM H（6）
公开年 2012（3）
申请年 2012（3） 
专利权人 KOREA INST E.（2） UNIV SUNGKYU.（2）

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Manufacture of porous graphene component involves introducing carbon source and substitution source in vapor deposition furnace, and simultaneously depositing carbon monoatomic layer on substrate positioned in furnace.

KIM H, KWON G

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B