国家/地区 中国（20）
IPC部 C（20）
IPC大类 C01（20） C23（20） H01（5）
C09（2）
IPC小类 C01B（20）
IPC C23C016/26（20）
发明人 LI Y（3） WANG X（2） ZHANG X（2）
公开年 2021（15） 2022（4）
申请年 2021（20）
专利权人 UNIV SINGAPO.（2）

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Graphene film preparation device useful for heating in pipe, comprises heating element, which is embedded in the quartz tube and forming heating cavity with quartz tube, the heating cavity is placed by substrate, and air supply assembly forming graphene film on the substrate.

QING F, LI X, HE Q

Method for improving graphene performance by wet soaking and low-temperature annealing, involves removing poly methyl methacrylate photo-resist remaining on graphene during transfer process by annealing in low-pressure and low-temperature atmosphere.

LI M, ZHENG S, WANG J

Three-dimensional thermally conductive wave-absorbing reinforced composite film, comprises graphene oxide/MXene films.

FANG X, HE X, ZHOU X, DOU L, YANG S, SUN A, CAO Y

Composite material used for improving electroconductivity of metal, has graphene fragment layer that comprises graphene fragments uniformly spread on metal foil layer.

GONG M, SUN B, WANG Y, CHEN Q, YANG W, LI Y, LIANG J, LIU B, ZHANG X, PEI Z

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Graphene composite film comprises graphene composite film main body comprising carbon nano-tube film substrate, and copper substrate.

MAO J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Industrial mass production of vertical graphene composite carbon felt involves soaking carbon felt in acid solution, vibrating, repeatedly washing soaked carbon felt with deionized water, drying, and putting carbon felt on roller device.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B