国家/地区 美国（5） 世界知识产权组织（4） 中国（3） 日本（3） 澳大利亚（2） 加拿大（2） 韩国（2）
IPC部 C（9）
IPC大类 C01（9） C30（9） B82（5）
H01（2）
IPC小类 C01B（9）
IPC C30B029/68（9）
发明人 JANG B Z（3） XIONG W（3） ZHAMU A（3）
公开年 2013（3）
申请年 2012（3）  2021（2） 
专利权人 NANOTEK INST.（3） JANG B Z（2） XIONG W（2） ZHAMU A（2）

Manufacture of expanded graphite for forming exfoliated graphene oxide, involves adding iron(III) salt to mixture containing potassium manganese oxide, graphite and sulfuric acid/phosphoric acid to form solid graphite-intercalated compound, separating obtained compound and heating.

CHEN A, SALVERDA M, THIRUPPATHI A R, SIDHUREDDY B, RAHMATI F

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Production of unitary graphene layer or graphene single crystal for use as heat spreader involves preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, removing fluid medium, and heat-treating graphene.

ZHAMU A, XIONG W, JANG B Z

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M