国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8） H01（8） B82（4）
B01（2） B32（2） C08（2）
C23（2）
IPC小类 C01B（8）
IPC H01L021/02（8）
发明人
公开年 2015（8）
申请年 2015（5）  2014（2） 
专利权人

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D

Electrical device e.g. photodetector, has multi-layer graphene structure for laterally contacting single-layer graphene part, and graphite part in contact with surface of multi-layer graphene structure.

RUHL G, FOERG R

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X